SSG4536C n-ch: 7.1a, 30v, r ds(on) 28 m ? p-ch: -6a, -30v, r ds(on) 39 m ? n & p-ch enhancement mode power mosfet elektronische bauelemente 12-sep-2012 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to p rovide low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe sop-8 saves board space fast switching speed high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as compu ters,. printers, pcmcia cards, cellular and cordless te lephones package information package mpq leader size sop-8 2.5k 13 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol rating unit n-ch p-ch drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 20 v continuous drain current 1 t a = 25c i d 7.1 -6 a t a = 70c 5.8 -4.9 a pulsed drain current 2 i dm 20 -20 a continuous source current (diode conduction) 1 i s 1.3 -1.3 a total power dissipation 1 t a = 25c p d 2.1 w t a = 70c 1.3 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings maximum junction-to-ambient 1 t Q 10 sec r ja 62.5 c / w steady state 110 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure. ref. millimeter ref. millimeter min. max. min. max. a 5.8 6. 20 h 0 . 35 0 . 51 b 4 . 80 5. 00 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.50 0.93 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. sop-8 top view
SSG4536C n-ch: 7.1a, 30v, r ds(on) 28 m ? p-ch: -6a, -30v, r ds(on) 39 m ? n & p-ch enhancement mode power mosfet elektronische bauelemente 12-sep-2012 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol ch min. typ. max. unit teat conditions static gate threshold voltage v gs(th) n 1 - - v v ds =v gs , i d =250 a p -1 - - v ds =v gs , i d = -250 a gate-body leakage current i gss n - - 100 na v ds =0, v gs =20v p - - 100 v ds =0, v gs = -20v zero gate voltage drain current i dss n - - 1 a v ds =24v, v gs =0 p - - -1 v ds = -24v, v gs =0 on-state drain current 1 i d(on) n 20 - - a v ds =5v, v gs =10v p -20 - - v ds = -5v, v gs = -10v drain-source on-resistance 1 r ds(on) n - - 28 m v gs =10v, i d =7.1a - - 42 v gs =4.5v, i d =5.8a p - - 39 v gs = -10v, i d = -6a - - 59 v gs = -4.5v, i d = -4.9a forward transconductance 1 g fs n - 25 - s v ds =15v, i d =6.9a p - 10 - v ds = -15v, i d = -5.2a dynamic 2 total gate charge q g n - 4 - nc n-channel i d =6.9a, v ds =15v, v gs =10v p-channel i d = -5.2a, v ds = -15v, v gs = -10v p - 10 - gate-source charge q gs n - 1.1 - p - 2.2 - gate-drain(miller) charge q gd n - 1.4 - p - 1.7 - turn-on delay time t d(on) n - 8 - ns n-channel v dd =15v, v gs =10v i d =1a, r gen =6 p-channel v dd = -15v, v gs = -10v i d = -1a, r gen = 6 p - 10 - rise time t r n - 5 - p - 2.8 - turn-off delay time t d(off) n - 23 - p - 53.6 - fall time t f n - 3 - p - 46 - notes 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
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